electrical characteristics (wafer form)
nominal backmetal composition, (thickness) al - ti - ni/v - ag, (1ka - 1ka - 4ka - 6ka) nominal front metal composition, (thickness) 99% al/1% si, (4m) dimensions 0.085" x 0.090" wafer diameter 150mm, with std. < 100 > flat wafer thickness, tolerance 85m, +/- 7m relevant die mechanical dwg. number 01-5554 minimum street width 100m reject ink dot size 0.25mm diameter minimum ink dot location consistent throughout same wafer lot recommended storage environment store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300c parameter description guaranteed (min, max) test conditions v ce (on) collector-to-emitter saturation voltage 1.18v min, 1.50v max i c = 1a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 600v min t j = 25c, i ces = 1ma, v ge = 0v v ge(th) gate threshold voltage 3.5v min, 5.5v max v ge = v ce , t j =25c, i c = 250a i ces zero gate voltage collector current 10a max t j = 25c, v ce = 600v i ges gate-to-emitter leakage current 1.1a max t j = 25c, v ge = +/-20v e c g 600v i c(nom) = 3.0a v ce(on) typ. =1.8v @ i c(nom) @ 25c motor control igbt short circuit rated 150mm wafer features
! "
#$%& '
(
)) $ ( *)) )+ & #
,
)( -
% .
) ,)/,
+ *
gat e 1.24 [.048] 1.19 [.047] 0.64 [.025] 0.66 [.026] emitter 2.16 [.085] 2.29 [.090] 1. all dimensions are shown in millimeters [inches]. 4. dimens ional t olerances : 3. let t er des ignat ion: 2. cont rolling dimens ion: [inch]. not es : widt h < [.050] t olerance = + /- [.004] > [.050] t olerance = + /- [.008] > 1.270 t olerance = + /- 0.203 & length > [.0250] t olerance = + /- [.0010] > 0.635 t olerance = + /- 0.025 < [.0250] t olerance = + /- [.0005] < 0.635 t olerance = + /- 0.013 < 1.270 t olerance = + /- 0.102 & length overall die: widt h bonding pads: sk = source kelvin is = currentsense g = gat e s = source e = emitter
|
